Normally off transistors based on in situ passivated AlN/GaN heterostructures
Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Zemlyakov, V. E., Egorkin, V. I., Parnes, Ya. M.Volume:
42
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785016070312
Date:
July, 2016
File:
PDF, 512 KB
english, 2016