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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 2000 V SOI LDMOS with new drift structure for HVICs
Okawa, Takashi, Eguchi, Hiroomi, Taki, Masato, Hamada, KimimoriYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520871
File:
PDF, 809 KB
english, 2016