GR-noise characterization of Ge pFinFETs with STI first and...

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IEEE Electron Device Letters 2016

GR-noise characterization of Ge pFinFETs with STI first and STI last processes

Oliveira, Alberto, Simoen, Eddy, Mitard, Jerome, Agopian, Paula, Martino, Joao, Langer, Robert, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron, Claeys, Cor
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2595398
File:
PDF, 592 KB
english, 2016
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