Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs
Mehrabi, Kolsoom, Ebrahimi, Behzad, Yarmand, Roohollah, Afzali-Kusha, Ali, Mahmoodi, HamidLanguage:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2016.07.003
Date:
July, 2016
File:
PDF, 1.92 MB
english, 2016