The relationship between the reliability of transistors...

Technical Physics Letters 2016 / 7 Vol. 42; Iss. 7

The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial

Emtsev, V. V., Zavarin, E. E., Oganesyan, G. A., Petrov, V. N., Sakharov, A. V., Shmidt, N. M., V’yuginov, V. N., Zybin, A. A., Parnes, Ya. M., Vidyakin, S. I., Gudkov, A. G., Chernyakov, A. E.
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Volume:
42
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785016070075
Date:
July, 2016
File:
PDF, 377 KB
english, 2016
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