[IEEE 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Hsinchu, Taiwan (2016.5.4-2016.5.6)] 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Novel design of superjunction structure in third-generation SiGe HBTs for high breakdown voltage
Wang, Xiao, Jin, Dongyue, Zhang, Wanrong, Zhao, Xinyi, Guo, Yanling, Fu, Qiang, Wang, DiYear:
2016
Language:
english
DOI:
10.1109/ISNE.2016.7543296
File:
PDF, 287 KB
english, 2016