[IEEE 2016 5th International Symposium on Next-Generation...

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[IEEE 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Hsinchu, Taiwan (2016.5.4-2016.5.6)] 2016 5th International Symposium on Next-Generation Electronics (ISNE) - A new noise margin and average static power model for junctionless double-gate FETs (JLDGFET) working in subthreshold logic gate

Chiang, Te-Kuang, Yo, Chen Chih, Gao, Hong-Wun, Wang, Yeong-Her
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Year:
2016
Language:
english
DOI:
10.1109/ISNE.2016.7543300
File:
PDF, 222 KB
english, 2016
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