Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC...

Materials Science Forum 2016 / 5 Vol. 858

Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

Ji, Shi Yang, Kojima, Kazutoshi, Kosugi, Ryoji, Saito, Shingo, Sakuma, Yuuki, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.858.181
Date:
May, 2016
File:
PDF, 507 KB
english, 2016
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