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SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss
Jiang, Huaping, Wei, Jin, Dai, Xiaoping, Ke, Maolong, Deviny, Ian, Mawby, PhilipYear:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2599921
File:
PDF, 646 KB
english, 2016