SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce...

IEEE Electron Device Letters 2016

SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

Jiang, Huaping, Wei, Jin, Dai, Xiaoping, Ke, Maolong, Deviny, Ian, Mawby, Philip

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Year:

2016

Language:

english

Journal:

IEEE Electron Device Letters

DOI:

10.1109/LED.2016.2599921

File:

PDF, 646 KB

english, 2016

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