[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Integration of GaN HEMTs onto Silicon CMOS by micro Transfer Printing
Lerner, Ralf, Eisenbrandt, Stefan, Bower, Christopher, Bonafede, Salvatore, Fecioru, Alin, Reiner, Richard, Waltereit, PatrickYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520875
File:
PDF, 1.19 MB
english, 2016