Study on the impact of device parameter variations on...

Solid-State Electronics 2016 / 10 Vol. 124

Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs

Hemmat, Maedeh, Kamal, Mehdi, Afzali-Kusha, Ali, Pedram, Massoud
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Volume:
124
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.06.010
Date:
October, 2016
File:
PDF, 1.33 MB
english, 2016
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