A Physics-Based Statistical RTN Model for the Low Frequency...

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IEEE Transactions on Electron Devices 2016

A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs

Banaszeski da Silva, Mauricio, Tuinhout, Hans P., Zegers-van Duijnhoven, Adrie, Wirth, Gilson I., Scholten, Andries J.
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2593916
File:
PDF, 2.56 MB
english, 2016
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