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Influence of Channel Length and High-K Oxide Thickness on Subthreshold DC Performance of Graded Channel and Gate Stack DG-MOSFETs
Adak, Sarosij, Swain, Sanjit Kumar, Dutta, Arka, Rahaman, Hafizur, Sarkar, Chandan KumarLanguage:
english
Journal:
Nano
DOI:
10.1142/S1793292016501010
Date:
May, 2016
File:
PDF, 466 KB
english, 2016