Quantifying boron and phosphorous dopant concentrations in...

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physica status solidi (a) 2016 / 07

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Liu, AnYao, Nguyen, Hieu T., Macdonald, Daniel
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201600335
Date:
July, 2016
File:
PDF, 1017 KB
english, 2016
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