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Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300mm Si substrates
Bogumilowicz, Y., Hartmann, J.M., Rochat, N., Salaun, A., Martin, M., Bassani, F., Baron, T., David, S., Bao, X.-Y., Sanchez, E.Volume:
453
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.08.022
Date:
November, 2016
File:
PDF, 1.03 MB
english, 2016