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Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis
Xiao, Shiyu, Harada, Shunta, Murayama, Kenta, Ujihara, ToruLanguage:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/acs.cgd.6b00711
Date:
August, 2016
File:
PDF, 3.71 MB
english, 2016