Impact of pattern dependency of SiGe layers grown...

Solid-State Electronics 2016 / 10 Vol. 124

Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14nm node FinFETs

Qin, Changliang, Wang, Guilei, Kolahdouz, M., Luo, Jun, Yin, Huaxing, Yang, Ping, Li, Junfeng, Zhu, Huilong, Chao, Zhao, Ye, Tianchun, Radamson, Henry H.
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Volume:
124
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.07.024
Date:
October, 2016
File:
PDF, 2.57 MB
english, 2016
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