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Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness
Shiomi, Hiromu, Tsuji, Takashi, Ohse, Naoyuki, Onishi, Yasuhiko, Fukuda, KenjiVolume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.966
Date:
May, 2016
File:
PDF, 736 KB
english, 2016