High Channel Mobility 4H-SiC MOSFETs by As and P...

Materials Science Forum 2016 / 5 Vol. 858

High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

Mikhaylov, Aleksey I., Reshanov, S.A., Schöner, Adolf, Afanasyev, Alexey V., Luchinin, Victor V., Knoll, Lars, Minamisawa, Renato A., Alfieri, Giovanni, Bartolf, Holger
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.651
Date:
May, 2016
File:
PDF, 399 KB
english, 2016
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