Analytical Description of the Input Capacitance of 4H-SiC...

Materials Science Forum 2016 / 5 Vol. 858

Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps

Licciardo, Gian Domenico, Di Benedetto, Luigi, Bellone, Salvatore
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.858.825
Date:
May, 2016
File:
PDF, 358 KB
english, 2016
Conversion to is in progress
Conversion to is failed