Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability
Takhar, K, Gomes, U P, Ranjan, K, Rathi, S, Biswas, DVolume:
73
Language:
english
Journal:
IOP Conference Series: Materials Science and Engineering
DOI:
10.1088/1757-899X/73/1/012001
Date:
February, 2015
File:
PDF, 713 KB
english, 2015