Deep level traps in semi-polar n-GaN grown on patterned...

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physica status solidi (b) 2016 / 08

Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

Nguyen, X. S., Hou, H. W., De Mierry, P., Vennéguès, P., Tendille, F., Arehart, A. R., Ringel, S. A., Fitzgerald, E. A., Chua, S. J.
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Language:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201600364
Date:
August, 2016
File:
PDF, 549 KB
english, 2016
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