Stress-induced trench narrowing in Cu interconnect of...

Materials Science in Semiconductor Processing 2016 / 12 Vol. 56

Stress-induced trench narrowing in Cu interconnect of sub-20nm node: FEM simulation

Kim, Dong-Hyun, Mhin, Sung-Wook, Byun, Myung-Hwan
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Volume:
56
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.08.001
Date:
December, 2016
File:
PDF, 802 KB
english, 2016
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