Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping...

Materials Science Forum 2016 / 5 Vol. 858

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Anzalone, Ruggero, Salanitri, Marco, Lorenti, Simona, Campione, Alberto, Piluso, Nicolò, La Via, Francesco, Fiorenza, Patrick, Marcellino, Cinzia M., Arena, G., Coffa, Salvatore
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.197
Date:
May, 2016
File:
PDF, 406 KB
english, 2016
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