Doping Fluctuation and Defect Formation in Fast 4H-SiC...

Materials Science Forum 2016 / 5 Vol. 858

Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

Kamata, Isaho, Hoshino, Norihiro, Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kojima, Jun, Tsuchida, Hidekazu
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.61
Date:
May, 2016
File:
PDF, 455 KB
english, 2016
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