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Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area
Malik, R.J., Lunardi, L.M., Ryan, R.W., Shunk, S.C., Feuer, M.D.Volume:
25
Year:
1989
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19890788
File:
PDF, 300 KB
english, 1989