Impact of photoluminescence temperature and growth...

Optical Materials 2016 / 10 Vol. 60

Impact of photoluminescence temperature and growth parameter on the exciton localized in BxGa1-xAs/GaAs epilayers grown by MOCVD

Hidouri, Tarek, Saidi, Faouzi, Maaref, Hassen, Rodriguez, Philippe, Auvray, Laurent
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Volume:
60
Language:
english
Journal:
Optical Materials
DOI:
10.1016/j.optmat.2016.08.029
Date:
October, 2016
File:
PDF, 2.69 MB
english, 2016
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