Electron traps as major recombination centers in n-GaN...

Applied Physics Express 2016 / 06 Vol. 9; Iss. 6

Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

Lee, In-Hwan, Polyakov, Alexander Y., Smirnov, Nikolai B., Yakimov, Eugene B., Tarelkin, Sergey A., Turutin, Andery V., Shemerov, Ivan V., Pearton, Stephen J.
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Volume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.061002
Date:
June, 2016
File:
PDF, 445 KB
english, 2016
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