Low power, self-rectifying, and forming-free memristor with...

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Nano Letters 2016 / 09

Low power, self-rectifying, and forming-free memristor with an asymmetric programing voltage for a high density crossbar application

KIM, KYUNG MIN, Zhang, Jiaming, Graves, Catherine, Yang, J. Joshua, Choi, Byung Joon, Hwang, Cheol Seong, Li, Zhiyong, Williams, R. Stanley
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Language:
english
Journal:
Nano Letters
DOI:
10.1021/acs.nanolett.6b01781
Date:
September, 2016
File:
PDF, 1.86 MB
english, 2016
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