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A physics-based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor
He, Yunlong, Zhai, Shaopeng, Mi, Minhan, Zhou, Xiaowei, Zheng, Xuefeng, Zhang, Meng, Zhang, Peng, Yang, Ling, Wang, Chong, Ma, Xiaohua, Hao, YueLanguage:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201600504
Date:
September, 2016
File:
PDF, 844 KB
english, 2016