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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
Jauss, S. A., Schwaiger, S., Daves, W., Ambacher, O.Year:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520783
File:
PDF, 396 KB
english, 2016