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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Reverse-biased induced mechanical stress in AlGaN/GaN power diodes
Power, Maire, Pomeroy, James W., Chatterjee, Indranil, Risbud, Dilip M., Wynne, Barry, Gajda, Mark A., Sonsky, Jan, Pedrotti, Kenneth D., Uren, Michael J., Kuball, MartinYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520788
File:
PDF, 644 KB
english, 2016