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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Optimization of gate insulator material for GaN MIS-HEMT
Lin, Y. C., Lin, T. W., Wu, C. H., Yao, J. N., Hsu, H. T., Shih, W. C., Kakushima, K., Tsutsui, K., Iwai, H., Chang, E. Y.Year:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520791
File:
PDF, 947 KB
english, 2016