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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices
Bisi, Davide, Chan, Silvia H., Tahhan, Maher, Koksaldi, Onur S., Keller, Stacia, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Mishra, Umesh K.Year:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520792
File:
PDF, 975 KB
english, 2016