[IEEE 2016 28th International Symposium on Power...

  • Main
  • [IEEE 2016 28th International Symposium...

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices

Bisi, Davide, Chan, Silvia H., Tahhan, Maher, Koksaldi, Onur S., Keller, Stacia, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Mishra, Umesh K.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520792
File:
PDF, 975 KB
english, 2016
Conversion to is in progress
Conversion to is failed