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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Quasi-bipolar channel modulation instability analysis for P-GaN gate High Electron Mobility Transistor
Tang, Cen, Li, Xueyang, Hou, Mingchen, Xie, Gang, Sheng, KuangYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520793
File:
PDF, 1.22 MB
english, 2016