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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Demonstration of an enhanced trench Bimode Insulated Gate Transistor ET-BIGT
Rahimo, Munaf, Andenna, Maxi, Storasta, Liutauras, Corvasce, Chiara, Kopta, ArnostYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520800
File:
PDF, 1.31 MB
english, 2016