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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - The second-generation 600V RC-IGBT with optimized FWD
Yoshida, Takuya, Takahashi, Tetsuo, Suzuki, Kenji, Tarutani, MasayoshiYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520802
File:
PDF, 488 KB
english, 2016