[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Energy capability of SiC MOSFETs
Unger, Christian, Pfost, MartinYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520831
File:
PDF, 1.23 MB
english, 2016