Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
Teramoto, Yoshihito, Tabuchi, Yuki, Fukunaga, Daisuke, Ohtomo, Kohei, Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Sato, Shinya, Tsuge, Hiroshi, Yano, TakayukiVolume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.53
Date:
May, 2016
File:
PDF, 272 KB
english, 2016