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[IEEE 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2016.7.6-2016.7.8)] 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers
Hsu, Shu-Ming, Li, Yun-Shiuan, Tu, Min-Sheng, He, Jyun-Ci, Chiu, I-Chung, Chen, Pin-Guang, Lee, Min-Hung, Chen, Jian-Zhang, Cheng, I-ChunYear:
2016
Language:
english
DOI:
10.1109/AM-FPD.2016.7543648
File:
PDF, 1.29 MB
english, 2016