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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - High voltage device edge termination for wide temperature range plus humidity with surface charge control (SCC) technology
Honda, Shigeto, Harada, Tatsuo, Nishii, Akito, Chen, Ze, Shimizu, KazuhiroYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520835
File:
PDF, 523 KB
english, 2016