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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - A low loss IGBT with shallow p-well to adjust the carrier profiles at the emitter side
Yang, Zhuo, Jing Zhu, Weifeng Sun, Zhou, Jingcheng, Zhu, Yuanzheng, Ye, Peng, Li, ZongqingYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520844
File:
PDF, 515 KB
english, 2016