[IEEE 2016 28th International Symposium on Power...

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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Tailoring of field-stop layers in power devices by hydrogen-related donor formation

Niedernostheide, F.-J., Schulze, H.-J., Felsl, H. P., Hille, F., Laven, J. G., Pfaffenlehner, M., Schaffer, C., Schulze, H., Schustereder, W.
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Year:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520850
File:
PDF, 770 KB
english, 2016
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