[IEEE 2016 28th International Symposium on Power...

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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Use of 300 mm magnetic Czochralski wafers for the fabrication of IGBTs

Schulze, H. J., Ofner, H., Niedernostheide, F.-J., Laven, J. G, Felsl, H. P., Voss, S., Schwagmann, A., Jelinek, M., Ganagona, N., Susiti, A., Wubben, T., Schustereder, W., Breymesser, A., Stadtmuller
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Year:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520851
File:
PDF, 602 KB
english, 2016
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