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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode
Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Rahimo, Munaf, Vobecky, JanYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520855
File:
PDF, 787 KB
english, 2016