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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Doping engineering for improved immunity against BV softness and BV shift in trench power MOSFET
Deng, Shengling, Hossain, Zia, Burke, PeterYear:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520856
File:
PDF, 866 KB
english, 2016