[IEEE 2016 28th International Symposium on Power...

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[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 3-D TCAD simulation to optimize the trench termination design for higher and robust BVdss

Hossain, Zia, Sabui, Gourab, Sellers, James, Pratt, Brian, Salih, Ali
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Year:
2016
Language:
english
DOI:
10.1109/ISPSD.2016.7520860
File:
PDF, 1.07 MB
english, 2016
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