4H-SiC V-Groove Trench MOSFETs with Low Specific On-State Resistance and High Reliability
Mikamura, Y., Uchida, K., Saitoh, Y., Hiyoshi, T., Masuda, T., Tsuno, T.Volume:
75
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/07512.0191ecst
Date:
September, 2016
File:
PDF, 725 KB
english, 2016