Stress in SiC Single Crystal Caused by the Difference of...

Materials Science Forum 2016 / 5 Vol. 858

Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli

Fadeev, Alexey, Lebedev, Andrey, Tairov, Yuri
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.93
Date:
May, 2016
File:
PDF, 369 KB
english, 2016
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