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Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
Syaranamual, G.J., Sasangka, W.A., Made, R.I., Arulkumaran, S., Ng, G.I., Foo, S.C., Gan, C.L., Thompson, C.V.Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2016.07.012
Date:
September, 2016
File:
PDF, 1.52 MB
english, 2016